PART |
Description |
Maker |
2SB1537 |
Low collector to emitter saturation voltage VCE(sat). Large collector power dissipation PC.
|
TY Semiconductor Co., Ltd
|
FCX591 |
Power Collector dissipation: PC=1W, Continuous Collector Current: IC=-1A
|
TY Semiconductor Co., Ltd
|
2SD5041 |
Transistor. AF output amplifier for electronic flash unit. Collector-base voltage Vcbo = 40V. Collector-emitter voltage Vceo = 20V. Emitter-base voltage Vebo = 7V. Collector dissipation Pc(max) = 0.75W. Collector current Ic = 5A. Transistors
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Usha India Ltd.
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DS1393U-18 DS1392U-33 DS1393U-33 DS1390 DS1390U-3 |
RIBBON CABLE, 40WAY, PER M; Cores, No. of:40; Conductor make-up:7/36AWG; Wire size, AWG:28AWG; Impedance:119R; Pitch:1.27mm; Voltage rating, AC:50V; Colour:Grey; Capacitance:70.5pF/m; Approval Bodies:UL; Approval category:Style RoHS Compliant: Yes Low-Voltage SPI/3-Wire RTCs with Trickle Charger 1 TIMER(S), REAL TIME CLOCK, PDSO10 IGBT Module; Continuous Collector Current, Ic:200A; Collector Emitter Saturation Voltage, Vce(sat):3.4V; Power Dissipation, Pd:1500W; Collector Current:200A; Collector Emitter Voltage, Vceo:1.2kV; Leaded Process Compatible:No RoHS Compliant: No
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Maxim Integrated Produc... Maxim Integrated Products, Inc. MAXIM INTEGRATED PRODUCTS INC MAXIM - Dallas Semiconductor
|
2SC945 |
Collector current up to 150mA High hFE linearity Collector to base voltage VCBO 60 V
|
TY Semiconductor Co., L...
|
C2611 |
Collector-emitter Voltage: V(BR)CEO=400V, Collector Current: IC=0.2A
|
TY Semiconductor Co., Ltd
|
2SJ621 2SJ621-T2B 2SJ621-T1B |
RF Bipolar Transistor; Collector Emitter Voltage, Vceo:600mV; Transistor Polarity:Dual P Channel; Power Dissipation:0.36W; C-E Breakdown Voltage:15V; DC Current Gain Min (hfe):20; Collector Current:200mA MOS FIELD EFFECT TRANSISTOR Pch enhancement type MOS FET
|
NEC Corp. NEC[NEC]
|
2SC3120 |
Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 15 V
|
TY Semiconductor Co., Ltd
|
HDMP-1014 HDMP-1012 |
Bipolar Transistor; Collector Emitter Voltage, Vceo:400V; Transistor Polarity:N Channel; Power Dissipation:250W; C-E Breakdown Voltage:400V; DC Current Gain Min (hfe):10; Collector Current:50A; Package/Case:TO-3 Phase Lock Loop (PLL) IC; Number of Circuits:1; Package/Case:14-DIP; Mounting Type:Through Hole 4Low成本千兆速率发接收芯片
|
Agilent(Hewlett-Packard)
|
BC369 C62702-C748 |
From old datasheet system PNP Silicon AF Transistor (High current gain High collector current Low collector-emitter saturation voltage)
|
SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
BC337 BC337-25 BC337-40 Q62702-C314-V3 BC337-16 BC |
Si-Epitaxial PlanarTransistors NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) NPN硅晶体管自动对焦(高电流增益高集电极电流低集电极发射极饱和电压)
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Siemens Semiconductor G... Diotec Elektronische Infineon SIEMENS[Siemens Semiconductor Group] SIEMENS AG
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